LIGHT EMITTING DEVICE HAVING MgO PYRAMID STRUCTURE AND METHOD FOR FABRICATING THE SAME

ABSTRACT

A method for fabricating a light emitting device, the method including forming a semiconductor stack structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed therebetween, on a substrate, and forming a refractive index adjustment layer on the first semiconductor layer. The refractive index of the refractive index adjustment layer is smaller than the refractive index of the first semiconductor layer. Refractive indices of the first semiconductor layer and each layer disposed on the first semiconductor layer sequentially decrease in a direction extending away from the first semiconductor layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/809,052 filed on Mar. 19, 2013, which is the National Stage entry ofInternational Application No. PCT/KR2011/004592, filed on Jun. 23, 2011,and claims priority to and the benefit of Korean Patent Application No.10-2010-0066021, filed on Jul. 8, 2010, which are incorporated herein byreference for all purposes as if fully set forth herein.

BACKGROUND

1. Field

The present invention relates to technology for improving light outputof a gallium nitride-based vertical light emitting diode, and moreparticularly, to a gallium nitride-based vertical light emitting diode,which improves light output by providing a refractive index adjustmentlayer and an MgO pyramid structure on an n-type semiconductor layer, anda method for fabricating the same.

2. Discussion of the Background

A gallium nitride-based light emitting diode, which is used as a whitelight source, has high energy conversion efficiency, long lifespan andhigh light orientation, can be driven with a low voltage, requires nopreheating time and complicated driving circuit, and is resistantagainst shock and vibration, making it possible to implement varioustypes of high-class lighting system. Therefore, the galliumnitride-based light emitting diode is expected as a light source forsolid-state lighting, which will replace the existing light sources,such as incandescent lamp, fluorescent lamp, and mercury lamp, in thenear future. However, in order to use the gallium nitride-based lightemitting diode as the white light source in replacement of the existingmercury lamp or fluorescent lamp, the gallium nitride-based lightemitting diode must have excellent thermal stability and must be able toemit high-power light even at low power consumption.

A gallium nitride-based horizontal light emitting diode, which has beenwidely used as a white light source at present, has an advantage in thatits fabricating cost is relatively low and its fabricating process issimple, but has a fundamental drawback in that it is inappropriate foruse as a large-area high-power light source having a high appliedcurrent. A vertical light emitting diode is a device that overcomes thedrawback of the horizontal light emitting diode and is easily applicableto a large-area high-power light emitting diode.

The vertical light emitting diode has many advantages as compared withthe existing horizontal light emitting diode. Specifically, the verticallight emitting diode can obtain a very uniform current diffusion due toits small current diffusion resistance. Thus, the vertical lightemitting diode can obtain a lower operating voltage and a high lightoutput. Since the vertical light emitting diode can discharge heatthrough a metal or semiconductor substrate having excellent thermalconductivity, the lifespan of the device can be extended and thesignificantly improved high-power operation can be carried out.

In such a vertical light emitting diode, a maximum applied current isincreased about 3-4 times or more as compared with the horizontal lightemitting diode. Therefore, it is highly likely that the vertical lightemitting diode will be used as the white light source for lighting. Inpractice, many companies have conducted extensive research anddevelopment for commercialization and performance improvement of thevertical light emitting diode, and some companies are selling relatedproducts.

On the other hand, in the fabricating of the gallium nitride-basedvertical light emitting diode, a portion that can significantly improvelight output of the device is an n-type semiconductor layer disposed inan upper portion of the device. However, when the n-type semiconductorlayer is a smooth flat surface, a total reflection occurs in theinterface of the atmosphere and the semiconductor layer due to a largedifference in refractive index between the n-type semiconductor layerand the atmosphere (refractive index of the n-type semiconductorlayer=about 2.5, refractive index of the atmosphere=1). A considerablepart of light generated in an active layer cannot exit to the exterior.Consequently, high light output cannot be expected. Therefore, it isnecessary to prevent the occurrence of the total reflection byartificially deforming the surface of the semiconductor layer, so as toexit light to the exterior with minimum loss.

SUMMARY

An aspect of the present invention is directed to provide a method forfabricating a light emitting device that is applicable withoutexcessively modifying a conventional process for fabricating a galliumnitride-based light emitting diode, and to provide a light emittingdevice that increases light output of a light emitting diode as comparedwith a conventional gallium nitride-based group III-V compoundsemiconductor light emitting diode.

According to an embodiment of the present invention, a light emittingdevice comprises, a substrate; a first semiconductor layer, a secondsemiconductor layer, and an active layer disposed therebetween, whichare formed on the substrate; and a refractive index adjustment layerformed on the first semiconductor layer and having a refractive indexsmaller than a refractive index of the first semiconductor layer.

The refractive index adjustment layer may comprises, a first refractiveindex adjustment layer formed on the first semiconductor layer andhaving a refractive index smaller than the refractive index of the firstsemiconductor layer; and a second refractive index adjustment layerformed on the first refractive index adjustment layer and having arefractive index lower than a refractive index of the first refractiveindex adjustment layer, wherein the second refractive index adjustmentlayer comprises a pyramid structure.

The first semiconductor layer may be formed of a nitride-basedsemiconductor layer, and the first refractive index adjustment layer maybe formed of a ZnO-based semiconductor oxide layer.

The second refractive index adjustment layer may be formed of MgO-basedoxide, and the MgO-based oxide may comprise a ternary or multicomponentcompound formed by adding other elements to MgO.

The ternary compound may comprise Mg_(x)Be_(1-x)O, Mg_(x)Ca_(1-x)O,Mg_(x)Sr_(1-x)O, and Mg_(x)Ba_(1-x)O, and the multicomponent compound isa compound of Mg and two or more of Be, Ca, Sr, and Ba.

The MgO-based oxide may be an impurity-doped MgO-based oxide, and theimpurity may comprise a metal including at least one selected from thegroup of B, In, Zn, Tl, Al, Sn, Ga, Te, Si, C, Ge, N, P, As, Sb, Bi, S,Se, Br, I, and Ti, or an oxide thereof, or a mixture of the metal andthe oxide thereof.

The first refractive index adjustment layer may comprise at least one ofthe group of ZnO, Al-doped ZnO, In-doped ZnO, Ga-doped ZnO, ZrO₂, TiO₂,SiO₂, SiO, Al₂O₃, CuO_(x), and ITO.

The first semiconductor layer may be an n-type semiconductor layer.

The light emitting device may further comprise, a transparent ohmicelectrode layer disposed on the first semiconductor layer, wherein therefractive index adjustment layer may be disposed on the transparentohmic electrode layer.

According to another embodiment of the present invention, a method forfabricating a light emitting device may include: preparing a conductivesubstrate; forming a semiconductor stack structure comprising a firstsemiconductor layer, a second semiconductor layer, and an active layerdisposed therebetween on the substrate; and forming a refractive indexadjustment layer on the first semiconductor layer, wherein therefractive index adjustment layer has a refractive index smaller than arefractive index of the first semiconductor layer.

The refractive index adjustment layer may include: a first refractiveindex adjustment layer formed on the first semiconductor layer andhaving a refractive index smaller than the refractive index of the firstsemiconductor layer; and a second refractive index adjustment layerformed on the first refractive index adjustment layer and having arefractive index smaller than the refractive index of the firstrefractive index adjustment layer, wherein the second refractive indexadjustment layer comprises a pyramid structure.

According to the present invention, it is possible to prevent anoccurrence of total reflection in an interface between a semiconductorlayer of a light emitting diode and air, and it is possible to improvelight extraction efficiency. Therefore, light output of the lightemitting diode can be significantly improved as comparing with the priorart.

In addition, according to the present invention, a refractive indexadjustment layer having a pyramid structure can be formed withoutadditional process for forming roughness on a surface of a semiconductorlayer. Therefore, it is possible to instantly apply to a conventionalfabricating process of a gallium nitride-based light emitting diode. Itis possible to apply to a vertical light emitting diode and a horizontallight emitting diode as well, which is relatively difficult to form apyramid structure on a surface. Moreover, since the present invention isapplicable to a large area wafer process, it is very effective in termsof the reduction of fabricating costs.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1( a) is a cross-sectional view of a gallium nitride-based verticallight emitting diode according to an embodiment of the presentinvention, comprising a first refractive index adjustment layer and asecond refractive index adjustment layer including a pyramid structure,and FIG. 1( b) is a diagram describing the improvement of light outputby the first and second refractive index adjustment layers.

FIG. 2( a) is a scanning electron microscope (SEM) image showing thegallium nitride-based vertical light emitting diode according to theembodiment of the present invention and a MgO pyramid structure formedon the surface of the vertical light emitting diode, FIG. 2( b) is a SEMimage showing a flat surface of an n-type gallium nitride-basedsemiconductor layer, and FIG. 2( c) is a SEM image showing a surface ofa ZnO layer.

FIG. 3( a) is a high-resolution transmission electron microscope (TEM)image showing the MgO pyramid structure according to the embodiment ofthe present invention, and FIG. 3( b) is a diagram schematicallyillustrating a crystal structure of the MgO pyramid.

FIG. 4 is a diagram illustrating an electroluminescence (EL) spectrum ofa gallium nitride-based vertical light emitting diode according to anembodiment of the present invention, including a ZnO refractive indexadjustment layer and an MgO refractive index adjustment layer with apyramid structure.

FIG. 5 is a diagram illustrating a current-voltage curve of the galliumnitride-based vertical light emitting diode according to the embodimentof the present invention, including the ZnO refractive index adjustmentlayer and the MgO refractive index adjustment layer with the pyramidstructure.

FIG. 6( a) is a diagram illustrating two-dimensional light distributioncharacteristics of the gallium nitride-based vertical light emittingdiode according to the embodiment of the present invention, includingthe ZnO refractive index adjustment layer and the MgO refractive indexadjustment layer with the pyramid structure, and the conventionalvertical light emitting diode having the flat surface of the n-typegallium nitride-based semiconductor, and FIG. 6( b) is a diagramillustrating light output improvement characteristic with respect to anangle according to the present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Exemplary embodiments of the present invention will be described belowin more detail with reference to the accompanying drawings. The presentinvention may, however, be embodied in different forms and should not beconstrued as limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the present invention tothose skilled in the art. Throughout the disclosure, like referencenumerals refer to like elements throughout this disclosure.

Hereinafter, a structure of a light emitting device according to anembodiment of the present invention will be described in detail withreference to FIGS. 1 to 3.

FIG. 1( a) is a cross-sectional view illustrating a structure of agallium nitride-based vertical light emitting diode according to anembodiment of the present invention, including a first refractive indexadjustment layer 300 and a second refractive index adjustment layer 400including a pyramid structure 450, and FIG. 1( b) is a diagramdescribing the improvement of light output by the first and secondrefractive index adjustment layers 300 and 400.

Referring to FIG. 1( a), the gallium nitride-based vertical lightemitting diode according to the present invention may includes asubstrate 500, a p-type ohmic electrode layer 100, a semiconductor stackstructure 200, a first refractive index adjustment layer 300, a secondrefractive index adjustment layer 400, and an n-type electrode pad 600.The semiconductor stack structure 200 includes an n-type semiconductorlayer 210, an active layer 230, and a p-type semiconductor layer 250.The first refractive index adjustment layer 300 and the secondrefractive index adjustment layer 400 are formed on the semiconductorstack structure 200.

Since elements other than the first and second refractive indexadjustment layers 300 and 400 are not different from the structure ofthe conventional vertical light emitting diode, the first and secondrefractive index adjustment layers 300 and 400 will be described belowin detail.

According to the embodiment of the present invention, the firstrefractive index adjustment layer 300 and the second refractive indexadjustment layer 400 having refractive index values which are betweenthe refractive index of the gallium nitride-based semiconductor layer(n=about 2.5) and the refractive index of air (n=1) may be formed on then-type semiconductor layer 210 so as to increase a critical angle foremitting light into the air by adjusting the refractive index.

In addition, the first refractive index adjustment layer 300 is formedon the n-type semiconductor layer 210 and is a ZnO-based thin-film layerhaving a refractive index (for example, n=1.94) lower than that of then-type semiconductor layer 210. The first refractive index adjustmentlayer 300 may comprises at least one selected from the group of ZnO,Al-doped ZnO, In-doped ZnO, Ga-doped ZnO, ZrO₂, TiO₂, SiO₂, SiO, Al₂O₃,CuO_(x) and ITO, but the present invention is not limited thereto.However, for simplicity of description, the first refractive indexadjustment layer 300 will be simply referred to as a ZnO (refractiveindex adjustment) layer.

In addition, the second refractive index adjustment layer 400 is formedon the first refractive index adjustment layer 300 and has a refractiveindex (for example, n=1.74) lower than that of the first refractiveindex adjustment layer 300. For example, the second refractive indexadjustment layer 400 may be formed of MgO-based oxide. The MgO-basedoxide may comprise ternary or multicomponent compound formed by addingother elements to MgO.

Examples of the ternary compound include Mg_(x)Be_(1-x)O,Mg_(x)Ca_(1-x)O, Mg_(x)Sr_(1-x)O, and Mg_(x)Ba_(1-x)O, but the presentinvention is not limited thereto. The multicomponent compound may be acompound of Mg and two or more of Be, Ca, Sr, and Ba, but the presentinvention is not limited thereto.

In addition, the MgO-based oxide may be formed by doping impurity intoany MgO-based oxide, and there is no limitation to the impurity. Forexample, the impurity may be a metal comprising at least one selectedfrom the group of B, In, Zn, Tl, Al, Sn, Ga, Te, Si, C, Ge, N, P, As,Sb, Bi, S, Se, Br, I, and Ti, or an oxide thereof, or a mixture of themetal and the oxide thereof. However, for simplicity of description, thesecond refractive index adjustment layer 400 will be simply referred toas an MgO (refractive index adjustment) layer.

In addition, according to the present invention, the first and secondrefractive index adjustment layers 300 and 400 may be formed on then-type semiconductor layer 210. According to some embodiments, the firstand second refractive index adjustment layers 300 and 400 may be formedon a transparent n-type ohmic electrode layer (not illustrated) that isformed on the n-type semiconductor layer 210. In this case, the firstand second refractive index adjustment layers 300 and 400 have arefractive index smaller than that of the n-type ohmic electrode layer,and the second refractive index adjustment layer 400 may comprise apyramid structure formed on the surface thereof.

In addition, according to the present invention, the first and secondrefractive index adjustment layers 300 and 400 need not be necessarilyformed together. Only one of the first and second refractive indexadjustment layers 300 and 400 having the refractive index lower thanthat of the n-type semiconductor layer 210 may be formed on the n-typesemiconductor layer 210, and the first and second refractive indexadjustment layers 300 and 400 may be sequentially stacked as illustratedin FIG. 1. For example, the effect obtained when only the firstrefractive index adjustment layer 300 is formed can be seen from FIGS. 4and 5. However, the following description will focus on the case whereboth of the first and second refractive index adjustment layers 300 and400 are formed.

Referring to FIG. 1( b), according to the embodiment of the presentinvention, a critical angle between the n-type semiconductor layer 210and the first refractive index adjustment layer 300 is, for example,about 50.9° greater than 23.6°, is which is the critical angle betweenthe n-type semiconductor layer 210 and the air. The critical anglebetween the first refractive index adjustment layer 300 and the secondrefractive index adjustment layer 400 is, for example, about 63.1°,which is a further increased value.

FIG. 2( a) is a scanning electron microscope (SEM) image showing thegallium nitride-based vertical light emitting diode according to theembodiment of the present invention and the pyramid structure of the MgOrefractive index adjustment layer 400 formed on the surface of thevertical light emitting diode, FIG. 2B is a SEM image showing the flatsurface of the n-type semiconductor layer 210, and FIG. 2C is a SEMimage showing the surface of the ZnO refractive index adjustment layer300.

It can be seen from FIG. 2( a) that the pyramid structure 450 issuccessfully formed on the surface of the second refractive indexadjustment layer 400. On the other hand, since it can be confirmed fromFIGS. 2( b) and 2(c) that the n-type semiconductor layer 210 and the ZnOrefractive index adjustment layer 300 have the flat surface, it can beseen that the pyramid structure 450 of the refractive index adjustmentlayer according to the embodiment of the present invention can be formedon the second refractive index adjustment layer 400.

FIG. 3( a) is a high-resolution transmission electron microscope (TEM)image showing the MgO pyramid structure 450 according to the embodimentof the present invention, and FIG. 3( b) is a diagram schematicallyillustrating a crystal structure of the MgO pyramid structure 450.

It can be seen from the TEM image of FIG. 3( a) that the MgO pyramidstructure 450 is ended with (200) crystal plane and has a growthdirection of (111) crystal plane. In the MgO layer having the rock saltstructure, the (200) crystal plane has lower surface energy than the(111) crystal plane. Therefore, this can be described as a spontaneousprocess for reducing energy of a thin film during a deposition process.

That is, according to the embodiment of the present invention, thepyramid structure 450 can be formed on the surface of the secondrefractive index adjustment layer 400 during the deposition processwithout additional process. Therefore, according to the presentinvention, a large amount of light incident on the second refractiveindex adjustment layer 400 is scattered and discharged into the air bythe pyramid structure 450 of the second refractive index adjustmentlayer 400, without greatly modifying the conventional method forfabricating the light emitting device.

Hereinafter, the light output characteristic of the light emittingdevice according to the present invention will be described withreference to FIGS. 4 to 6.

FIG. 4 is a diagram illustrating an electroluminescence (EL) spectrum ofthe gallium nitride-based vertical light emitting diode according to theembodiment of the present invention, including the ZnO refractive indexadjustment layer 300 and the MgO adjustment layer 400 with the pyramidstructure 450.

On the other hand, for comparison in the graph of FIG. 4, the ELspectrum of the vertical light emitting diode including the ZnOrefractive index adjustment layer 300 and the MgO refractive indexadjustment layer 400 is illustrated together with the case of theconventional vertical light emitting diode including the n-typesemiconductor layer with the flat surface and the case of the verticallight emitting diode including only the flat ZnO refractive indexadjustment layer 300 (that is, the first refractive index adjustmentlayer) on the n-type semiconductor layer 210.

It can be seen from FIG. 4 that the light output is improved by theincreased critical angle when the ZnO refractive index adjustment layer300 is included on the n-type semiconductor layer 210, as compared withthe conventional vertical light emitting diode including the n-typesemiconductor layer with the flat surface. Also, it can be seen that thelight output of the light emitting diode is further improved up to 1.5times when both of the ZnO refractive index adjustment layer 300 and theMgO refractive index adjustment layer 400 are included.

The ZnO and MgO refractive index adjustment layers 300 and 400 and theMgO pyramid structure 450 according to the embodiment of the presentinvention can be manufactured using general optical lithographypatterning, without using E-beam lithography patterning that is high infabricating cost and is difficult to apply to a large-area waferprocess.

Although not limited, for example, the ZnO and MgO refractive indexadjustment layers 300 and 400 may be formed on only the surface of then-type semiconductor layer 210 a method including, forming a photoresist(PR) pattern using optical lithography, depositing ZnO and MgOrefractive index adjustment layers 300 and 400, and removing the PRusing a lift-off process using acetone. This method is very effective interms of the application to the large area and the fabricating costbecause the pyramid structure 450 can be formed without separateadditional processes.

FIG. 5 is a diagram illustrating a current-voltage curve of the galliumnitride-based vertical light emitting diode according to the embodimentof the present invention, including the ZnO refractive index adjustmentlayer 300 and the MgO adjustment layer 400 with the pyramid structure450.

For comparison, in the graph of FIG. 5, the current-voltage curve of thevertical light emitting diode including the ZnO refractive indexadjustment layer 300 and the MgO refractive index adjustment layer 400is illustrated together with the case of the conventional vertical lightemitting diode including the n-type semiconductor layer with the flatsurface and the case of the vertical light emitting diode including onlythe flat ZnO refractive index adjustment layer 300 (that is, the firstrefractive index adjustment layer) on the n-type semiconductor layer210.

It can be seen from FIG. 5 that the electrical characteristic of thelight emitting diode is not degraded even when the ZnO refractive indexadjustment layer 300 and the MgO refractive index adjustment layer 400are formed according to the embodiment of the present invention.

FIG. 6( a) is a diagram illustrating two-dimensional light distributioncharacteristics of the gallium nitride-based vertical light emittingdiode according to the embodiment of the present invention, includingthe ZnO refractive index adjustment layer 300 and the MgO refractiveindex adjustment layer 400 with the MgO pyramid structure 450, and theconventional vertical light emitting diode including the n-type galliumnitride-based semiconductor with the flat surface, and FIG. 6( b) is adiagram illustrating the light output improvement characteristic withrespect to the angle according to the present invention.

Referring to FIG. 6( a), since the conventional vertical light emittingdiode including the n-type semiconductor layer with the flat surface hasa small critical angle of about 23.6°, the light output is greatlyexhibited in a direction perpendicular to the surface of the n-typesemiconductor layer, and the light output is rapidly reduced as it goestoward the side. On the contrary, according to the embodiment of thepresent invention, in the case of the vertical light emitting diodeincluding the ZnO refractive index adjustment layer 300 and the MgOrefractive index adjustment layer 400 including the MgO pyramid 450, thelight output is greatly increased at the side and light in the directionof refraction is also increased. Also, this can be confirmed from thegraph according to the detection angle by FIG. 6( b).

Therefore, as described above, according to the embodiment of thepresent invention, in the case where the first refractive indexadjustment layer 300 and the second refractive index adjustment layer400 are formed on the n-type semiconductor layer 210 and the secondrefractive index adjustment layer 400 has the pyramid structure 450, thelight output characteristic and light distribution characteristic of thegallium nitride-based vertical light emitting diode can be improved.

While the present invention has been described with respect to thespecific embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirit and scope of the invention as defined in the followingclaims. Therefore, it is to be understood that the foregoing isillustrative of various exemplary embodiments of the invention and isnot to be construed as limited to the specific embodiments disclosed,are intended to be included within the scope of the appended claims.

What is claimed is:
 1. A method for fabricating a light emitting device,the method comprising: forming a semiconductor stack structurecomprising a first semiconductor layer, a second semiconductor layer,and an active layer disposed therebetween, on a substrate; and forming arefractive index adjustment layer on the first semiconductor layer,wherein the refractive index of the refractive index adjustment layer issmaller than the refractive index of the first semiconductor layer, andwherein refractive indices of the first semiconductor layer and eachlayer disposed on the first semiconductor layer sequentially decrease ina direction extending away from the first semiconductor layer.
 2. Themethod of claim 1, wherein the refractive index adjustment layercomprises: a first refractive index adjustment layer formed on the firstsemiconductor layer, the first refractive index adjustment layercomprising a refractive index smaller than the refractive index of thefirst semiconductor layer; and a second refractive index adjustmentlayer formed on the first refractive index adjustment layer, the secondrefractive index adjustment layer comprising a refractive index smallerthan the refractive index of the first refractive index adjustmentlayer, wherein the second refractive index adjustment layer comprises apyramid structure.
 3. The method of claim 1, wherein the substrate isconductive.
 4. The method of claim 1, wherein the first semiconductorlayer comprises a nitride-based semiconductor layer, and the firstrefractive index adjustment layer comprises a ZnO-based semiconductoroxide.
 5. The method of claim 1, wherein the second refractive indexadjustment layer comprises a ternary MgO-based compound, or amulticomponent MgO-based compound comprising MgO and at least two otherelements.
 6. The method of claim 5, wherein the ternary MgO-basedcompound comprises Mg_(x)Be_(1-x)O, Mg_(x)Ca_(1-x)O, Mg_(x)Sr_(1-x)O, orMg_(x)Ba_(1-x)O, and wherein the multicomponent MgO-based compoundcomprises two or more of Be, Ca, Sr, and Ba.
 7. The method of claim 5,wherein the ternary MgO-based compound or the multicomponent MgO-basedcompound is doped with an impurity, the impurity comprising at least oneof B, In, Zn, Tl, Al, Sn, Ga, Te, Si, C, Ge, N, P, As, Sb, Bi, S, Se,Br, I, Ti, and an oxide thereof
 8. The method of claim 1, wherein thefirst refractive index adjustment layer comprises at least one of ZnO,Al-doped ZnO, In-doped ZnO, Ga-doped ZnO, ZrO₂, TiO₂, SiO₂, SiO, Al₂O₃,CuO_(x), and indium tin oxide (ITO).